M-Center in Neutron-Irradiated 4H-SiC

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.

Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings...

Electron spin coherence of silicon vacancies in proton-irradiated 4H-SiC

We report T2 spin coherence times for electronic states localized in Si vacancies in 4H -SiC. Our spin coherence study included two SiC samples that were irradiated with 2 MeV protons at different fluences (1013 and 1014 cm−2) in order to create samples with unique defect concentrations. Using optically detected magnetic resonance and spin echo, the coherence times for each sample were measured...

Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC

Using capacitance transient techniques, a bistable center, here called FB-center, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (Ea = EC − 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the tran...

Metastable defects in low-energy electron irradiated n-type 4H-SiC